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MTD10N10EL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
V (BR)DSS
Vdc
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 100 Vdc, V GS = 0 Vdc)
(V DS = 100 Vdc, V GS = 0 Vdc, T J = 125 ° C)
I DSS
100
?
?
?
?
115
?
?
?
?
10
100
mV/ ° C
m Adc
Gate?Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain?to?Source On?Resistance (V GS = 5.0 Vdc, I D = 5.0 Adc)
V GS(th)
R DS(on)
1.0
?
?
1.45
4.0
0.17
2.0
?
0.22
Vdc
mV/ ° C
W
Drain?to?Source On?Voltage
V DS(on)
Vdc
(V GS = 5.0 Vdc, I D = 10 Adc)
(V GS = 5.0 Vdc, I D = 5.0 Adc, T J = 125 ° C)
?
?
1.85
?
2.6
2.3
Forward Transconductance (V DS = 15 Vdc, I D = 5.0 Adc)
g FS
2.5
7.9
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
741
1040
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
175
18.9
250
40
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
11
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 50 Vdc, I D = 10 Adc,
V GS = 5.0 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
74
17
38
150
30
80
Gate Charge (See Figure 8)
(V DS = 80 Vdc, I D = 10 Adc,
V GS = 5.0 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
9.3
2.56
4.4
4.66
15
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage (Note 3)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
(I S = 10 Adc, V GS = 0 Vdc)
(I S = 10 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 10 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.98
0.898
124.7
86
38.7
0.539
1.6
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
7.5
?
?
nH
nH
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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